论文摘要
AlxGa1-xN半导体材料有着广泛的用途,其中之一是在紫外探测器制作中的应用。AlxGa1-xN的带隙从3.4eV到6.2eV,对应的波长范围从365nm到200nm,覆盖了光谱中主要的紫外区。要达到日盲型紫外探测（截止波长小于280nm）,必须使用Al组分高于40%的AlGaN材料作为有源层,作为窗口层的AlGaN材料更需要达到60%左右。由于高Al组分的AlGaN材料生长过程中存在着强气相预反应,因此随着Al组分增加,AlGaN材料的外延生长难度增大,材料晶体质量下降。另外,Al-N键和Ga-N键的键能差别很大,造成晶体生长时Al原子和Ga原子具有不同的表面迁移率,加剧了外延生长难度。本论文采用低温和高温AlN复合缓冲层的方法利用LP-MOCVD在蓝宝石衬底上外延生长AlGaN/AlN结构,进行了表面形貌和晶体质量、以及应变分析、后期器件制作的初步研究等。
论文目录
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