论文摘要
本论文研究目的是为制备电子学器件用YBCO薄膜和铁电/YBCO双层膜提供实验参考,并提出一种用热丝化学气相沉积(HFCVD)原位生长MgB2超导薄膜的方法。采用流动氧气中退火和真空原位退火法对斜切SrTiO3(001)基片进行了预处理。用脉冲激光蒸发普通固态烧结靶在015°斜切SrTiO3(001)单晶基片上制备了YBCO薄膜。在1.2°斜切LaAlO3(001)基片上用脉冲激光沉积(PLD)法制备了Ba0.1Sr0.9TiO3/YBCO双层薄膜。用脉冲激光蒸发熔融织构靶在正切SrTiO3(001)单晶基片上制备了YBCO薄膜。用HFCVD法在蓝宝石基片上原位生长了MgB2超导薄膜。分析和表征了基片斜切角度对薄膜表面形貌、微观结构和超导电性能的影响。测定了Ba0.1Sr0.9TiO3/YBCO双层薄膜的基本微波性能。运用原子力显微镜、高能反射式电子衍射和扫描电镜对预处理基片和在其上生长的薄膜表面形貌进行了研究。用X射线衍射仪和透射电镜对薄膜微观结构进行了分析和表征。用标准四引线法和磁化率测量法测定了薄膜的超导临界转变温度(Tc)。研究结果表明,用PLD法在预处理0°15°斜切SrTiO3(001)基片上制备了以“台阶流动”方式生长的c取向YBCO薄膜。随基片斜切角度增大,薄膜晶体质量下降,Tc降低。当基片斜切角度大于6°时,YBCO表面产生了较大的台阶,表面粗糙度增大,并产生与台阶边缘垂直的裂纹或孔洞。用PLD法在1.2°斜切的LaAlO3(001)基片上原位生长了晶体质量良好和外延程度较高并具有明锐平直界面的Ba0.1Sr0.9TiO3/YBCO双层薄膜异质结。YBCO层的Tc值(88 K)没有受到其上铁电层生长的影响。该异质结介电常数、介电损耗、可调谐性和品质因数基本上可以满足在液氮温度应用的可调微波器件的要求。用熔融织构靶制备的YBa2Cu3O7-δ薄膜,不但没有显著降低Tc,还明显抑制薄膜表面颗粒的形成,且在基片表面上和薄膜内形成了具有良好外延取向生长的纳米尺度的矩形Y2O3杂相颗粒。用HFCVD方法在蓝宝石基片上原位生长出了单相的MgB2超导薄膜。生长温度从400°C升高到600°C,薄膜的Tc由18 K升高到36 K,且薄膜致密度增大,结晶性增高。
论文目录
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标签:高温超导薄膜论文; 微观结构论文; 铁电论文; 超导异质结论文; 斜切基片论文; 脉冲激光沉积论文; 热丝化学气相沉积论文;